We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation.The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior.The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs.
The x-ray photoelectron Leather Valet Tray spectroscopy was used to obtain the chemical Floor Mixers nature from the NWs surface, investigating the oxygen vacancy state.A stable switching voltages and a clear memory window were observed in needle-shaped NWs.The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.